The ROHM IMX1T110 packs two NPN transistors into a single SC-74 / SOT-457 surface-mount package, saving board space and reducing pick-and-place cost compared to two discrete SOT-23s. Each transistor is rated for a collector-emitter breakdown voltage of 50 V and a maximum collector current of 150 mA, with a transition frequency of 180 MHz — making it a solid fit for low-power switching, signal amplification, and driver stages in industrial controls, consumer electronics, and telecom equipment where board density matters.
The 50 V Vce breakdown and 150 mA collector current define the safe operating envelope for general-purpose switching and amplification up to medium-voltage rails. The 180 MHz transition frequency gives enough bandwidth for VHF oscillator and preamp stages, though the 300 mW total power dissipation limits continuous current in a single device — derate if both transistors run hard simultaneously. DC current gain (hFE) is a minimum of 120 at 1 mA, 6 V, which provides consistent drive for low-level signal stages and ensures the part can saturate a relay or LED driver without excessive base current. Vce saturation is 400 mV max at 5 mA base, 50 mA collector — adequate for logic-level switching but not a low-Vce(sat) type for high-efficiency applications. Collector cutoff current is a maximum 100 nA, which keeps leakage negligible in high-impedance or battery-powered circuits at room temperature. The 150°C junction temperature rating allows operation in warm environments like engine bays or industrial enclosures, provided the total power stays within the 300 mW package limit.
Package and mounting notes
The IMX1T110 comes in an SC-74 / SOT-457 package (supplier device package SMT6), a six-pin small outline surface-mount package.
Lifecycle and sourcing posture
It is ROHS3 compliant.