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ROHM Semiconductor IMT1AT110 — Memory (DRAM / SRAM / Flash / EEPROM)

IMT1AT110 dual PNP transistor, 50 V 150 mA, 140 MHz, SOT-457

MPNIMT1AT110
End of Life

ROHM Semiconductor IMT1AT110, dual PNP transistor array, 50 V Vce, 150 mA Ic, 140 MHz ft, 300 mW, SC-74/SOT-457, SMT6, Surface Mount.

$0.47Ref. price · indicative, final on quote
PackagingSC-74, SOT-457
StockContact for availability
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Specifications

IMT1AT110 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type2 PNP (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)150mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 1mA, 6V
Power - max300mW
Frequency140MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-74, SOT-457
Vce saturation (Max) @ ib, ic500mV @ 5mA, 50mA

Product details

Dual PNP transistor array in a 6-pin SOT-457

The ROHM Semiconductor IMT1AT110 integrates two matched PNP transistors in a single SC-74 (SOT-457) surface-mount package, designated SMT6 as the supplier device package. Each transistor is rated for a collector-emitter breakdown voltage of 50 V and a continuous collector current of 150 mA, with a maximum power dissipation of 300 mW for the combined die. The 140 MHz transition frequency and a minimum DC current gain (hFE) of 120 at 1 mA, 6 V make it suitable for general-purpose switching and amplification in space-constrained designs.

The 50 V Vce(max) and 150 mA Ic(max) define the safe operating area for each transistor. For a 24 V industrial rail, the 50 V breakdown provides margin for inductive kickback or transient spikes. The 150 mA continuous rating covers typical loads like relay coils, small solenoids, LED indicators, or logic-level signal conditioning. The 300 mW total power budget is shared across both die — if one transistor dissipates 200 mW, the other is limited to 100 mW, so thermal balance matters in continuous operation.

140 MHz transition frequency — switching speed

The 140 MHz ft means the transistor maintains useful gain well into the VHF range. For switching applications, this translates to rise and fall times in the low-nanosecond region at moderate collector currents. It is fast enough for PWM frequencies up to several megahertz, but not intended for RF power amplification. The saturation voltage is specified at 500 mV maximum at 5 mA base current and 50 mA collector current — a typical on-state loss for a small-signal PNP.

150°C junction temperature — industrial and automotive environments

Rated for a maximum junction temperature of 150°C, the IMT1AT110 can operate in environments where ambient temperatures exceed 85°C — such as inside a motor drive enclosure, near an engine bay, or in a power supply with limited airflow. The 300 mW power dissipation must be derated above 25°C using the package's thermal resistance; the small SOT-457 footprint means the PCB copper area acts as the primary heatsink.

Package and footprint — SC-74 / SOT-457

The IMT1AT110 is supplied in the SC-74 (also designated SOT-457) package, a 6-pin surface-mount outline with a 1.5 mm body width and 0.95 mm pin pitch. The small footprint saves board area compared to two discrete SOT-23 transistors, at the cost of slightly higher thermal coupling between the die.

Frequently asked questions

What is the closest functional second-source for IMT1AT110?

The IMZ1AT108 is the closest functional alternative — same 0.3 W power rating, same 50 V breakdown, same SOT-457 package, but configured as one NPN and one PNP transistor rather than dual PNP. Its transition frequency is 180 MHz versus 140 MHz for the IMT1AT110. For a true dual-PNP replacement, the EMT1T2R and UMT1NTN are pin-compatible options with identical 140 MHz ft and 500 mV Vce(sat) at 5 mA / 50 mA, though their power rating is 150 mW — half the IMT1AT110's 300 mW budget.