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ROHM Semiconductor IMH23T110 — Memory (DRAM / SRAM / Flash / EEPROM)

IMH23T110 dual NPN pre-biased transistor, 600 mA Ic, 20 V

MPNIMH23T110
End of Life

ROHM Semiconductor IMH23T110, dual NPN pre-biased transistor, 20 V Vce, 600 mA Ic, 4.7 kOhm base resistor, 150 MHz transition frequency, SC-74 SOT-457 surface mount, ROHS3 compliant.

$0.52Ref. price · indicative, final on quote
PackagingSC-74, SOT-457
StockContact for availability
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Specifications

IMH23T110 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type2 NPN - Pre-Biased (Dual)
Voltage - collector emitter breakdown20V
Current - collector (Ic)600mA
DC current gain (hFE) (Min) @ ic, vce820 @ 50mA, 5V
Power - max300mW
Frequency150MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-74, SOT-457
Resistor - base (R1)4.7kOhms
Vce saturation (Max) @ ib, ic150mV @ 2.5mA, 50mA

Product details

Two NPNs with built-in bias resistors in a single SOT-457

The ROHM Semiconductor IMH23T110 packs two NPN pre-biased transistors into a single SC-74 (SOT-457) surface-mount package. Each transistor integrates the base bias resistor (R1 = 4.7 kOhms) internally, so no external resistors are needed for the base drive — the part switches directly from a logic output. The dual die saves board area and placement cost compared to two discrete transistors plus two resistors. Collector current is rated 600 mA maximum, with a collector-emitter breakdown of 20 V — sized for low-side switching of relays, solenoids, small motors, and indicator LEDs in 5 V or 3.3 V systems. The 150 MHz transition frequency means it handles PWM up to several MHz cleanly. DC current gain (hFE) is a minimum 820 at 50 mA, 5 V, so the base drive current needed is very low — a 3.3 V GPIO with a series resistor can saturate the output. Vce saturation is typically 150 mV at 50 mA, keeping conduction losses low. Total power dissipation for the dual package is 300 mW — derate for ambient temperature above 25 °C; the SMT6 footprint on standard FR4 gives adequate thermal performance for most low-power switching loads.

How the 4.7 kOhm base resistor affects your drive circuit

The integrated R1 of 4.7 kOhms sets the input current for a given logic voltage. At 5 V logic, base current is roughly (5 V - 0.7 Vbe) / 4.7 kOhm ≈ 0.9 mA, which with a minimum hFE of 820 can drive over 700 mA collector current — more than the 600 mA rating. At 3.3 V logic, base current is about 0.55 mA, still enough for several hundred mA of load. Compare with the IMH11AT110 (R1 = 10 kOhms) — the IMH23T110's lower base resistor pulls more base current at the same logic voltage, giving higher available collector current for a given input. If your load is under 300 mA, the IMH11AT110 is also an option; above that, the IMH23T110 is the better fit.

Lifecycle and compliance

For a pre-biased dual transistor in a mature package (SOT-457), this is a stable, long-availability part — no LTB risk on the horizon.

Frequently asked questions

What is the maximum collector current of IMH23T110?

The maximum collector current (Ic) is 600 mA per transistor. The collector-emitter breakdown voltage is 20 V. Total package dissipation is 300 mW.

Is IMH23T110 RoHS compliant?

Yes, the IMH23T110 is ROHS3 compliant per the manufacturer's specification.

Can I use IMH23T110 in a 5V logic circuit?

Yes. The integrated 4.7 kOhm base resistor draws roughly 0.9 mA from a 5 V logic output, which with the minimum hFE of 820 provides more than enough base drive to saturate the transistor at collector currents up to 600 mA. No external base resistor is needed.