IMD9AT108

ROHM Semiconductor

TRANS NPN/PNP PREBIAS 0.3W SMT6

ROHM Semiconductor IMD9AT108
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IMD9AT108 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce68 @ 5mA, 5V
Power - max300mW
Frequency - transition250MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-74, SOT-457
Resistor - base (R1)10kOhms
Resistor - emitter base (R2)47kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA
IMD9AT108
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