IMD2AT108

ROHM Semiconductor

IMD2AT108 dual pre-biased transistor from Rohm Semiconductor, 1 NPN + 1 PNP, 22 kOhm base and emitter-base resistors, 250 MHz transition frequency, 300 mW max, SC-74/SOT-457 surface mount.

ROHM Semiconductor IMD2AT108
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[IN STOCK] In Stock: 1,160 pcs
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IMD2AT108 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce56 @ 5mA, 5V
Power - max300mW
Frequency - transition250MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-74, SOT-457
Resistor - base (R1)22kOhms
Resistor - emitter base (R2)22kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Technical details

Dual pre-biased pair in a single SMT6 package

The Rohm Semiconductor IMD2AT108 packs one NPN and one PNP pre-biased transistor into a single SC-74 (SOT-457) surface-mount package, designated SMT6. Both the base resistor (R1) and the emitter-base resistor (R2) are 22 kOhms, giving a matched switching threshold across the complementary pair.

Transition frequency and saturation

A transition frequency of 250 MHz means the IMD2AT108 can handle switching up into the low-VHF range, adequate for most digital interface translation and oscillator circuits. The Vce saturation is specified at 300 mV maximum with a 500 µA base drive and 10 mA collector current, which keeps the on-state voltage drop low enough for 3.3 V logic rails. Minimum DC current gain is 56 at 5 mA collector current and 5 V Vce.

Active product status

This is a current-production part, ROHS3 compliant, available through independent distribution.

IMD2AT108
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