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ROHM Semiconductor EMT51T2R — Memory (DRAM / SRAM / Flash / EEPROM)

EMT51T2R Dual PNP Transistor, 20V 200mA 350MHz SOT-563

MPNEMT51T2R
End of Life

ROHM Semiconductor EMT51T2R, dual PNP transistor, 20 V VCEO, 200 mA Ic, 350 MHz fT, SOT-563/SOT-666 surface-mount package, 150 mW max power.

$0.48Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
StockContact for availability
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Specifications

EMT51T2R Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type2 PNP (Dual)
Voltage - collector emitter breakdown20V
Current - collector (Ic)200mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 1mA, 6V
Power - max150mW
Frequency350MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-563, SOT-666
Vce saturation (Max) @ ib, ic300mV @ 10mA, 100mA

Product details

Dual PNP in a 1.6 mm × 1.6 mm footprint

The ROHM EMT51T2R packs two matched PNP transistors into a single SOT-563 package, saving board area compared to two discrete SOT-23s. Each transistor is rated for a collector current of 200 mA and a collector-emitter breakdown voltage of 20 V, with a transition frequency of 350 MHz — fast enough for signal switching and level translation up to a few tens of MHz. The 150 mW total power budget means the package relies on the PCB copper for heat spreading; keep the ambient derating in mind if both transistors conduct simultaneously near the current limit.

The minimum DC current gain of 120 at 1 mA collector current and 6 V collector-emitter is the spec that determines base drive margin in low-level switching. The 100 nA maximum collector cutoff current is tight enough that leakage won't pull down a high-impedance node at room temperature.

Package and mounting

The EMT51T2R is supplied in a SOT-563 package (also listed as SOT-666), with the supplier device designation EMT6. It is a surface-mount device intended for reflow assembly. The package is small — roughly 1.6 mm × 1.6 mm — so the PCB footprint and solder paste stencil aperture need careful sizing to avoid bridging between the six leads.

Lifecycle and compliance

The junction temperature rating of 150 °C is typical for general-purpose transistors and allows operation in warm environments as long as the total power dissipation stays within the 150 mW package limit.

Frequently asked questions

What is the hFE of EMT51T2R at 1 mA?

The minimum DC current gain (hFE) is 120 at a collector current of 1 mA and collector-emitter voltage of 6 V.

What is the maximum collector current for EMT51T2R?

The maximum collector current (Ic) is 200 mA per transistor.

Is EMT51T2R RoHS compliant?

Yes, the EMT51T2R is ROHS3 compliant.