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ROHM Semiconductor EMT1T2R — Memory (DRAM / SRAM / Flash / EEPROM)

EMT1T2R Dual PNP Transistor, 50V 150mA 140MHz SOT-563

MPNEMT1T2R
End of Life

ROHM EMT1T2R dual PNP transistor, 50 V collector-emitter breakdown, 150 mA collector current, 140 MHz transition frequency, 150 mW power dissipation, SOT-563 / EMT6 surface-mount package.

$0.41Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

EMT1T2R Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type2 PNP (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)150mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 1mA, 6V
Power - max150mW
Frequency140MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-563, SOT-666
Vce saturation (Max) @ ib, ic500mV @ 5mA, 50mA

Product details

Dual PNP in a 1.6×1.6 mm footprint

The ROHM EMT1T2R packs two matched PNP transistors into a single SOT-563 package (also designated EMT6), saving board area compared to two discrete SOT-23s. Each transistor is rated for 50 V collector-emitter breakdown and 150 mA continuous collector current, with a transition frequency of 140 MHz — fast enough for low-frequency switching regulators, signal-level inverters, and current-source pairs in 24 V or 48 V industrial rails.

Package options for prototype and production

This ordering code covers both Tape & Reel (TR) for automated assembly and Cut Tape (CT) for prototype or low-volume builds. The surface-mount SOT-563 case measures roughly 1.6 mm × 1.6 mm, with a 0.5 mm pitch — verify the land pattern against the EMT6 supplier device package drawing before layout.

Key ratings for BOM fit

The 50 V Vceo breakdown sets the maximum supply rail — comfortable on 24 V systems, marginal on 48 V without derating. The 150 mA collector current handles small-signal loads; for higher current the 150 mW power limit becomes the binding constraint. DC current gain (hFE) is a minimum of 120 at 1 mA, 6 V, which provides consistent beta for analog current mirrors or digital level shifters. Vce saturation is 500 mV max at 5 mA base, 50 mA collector — typical for a small-signal PNP, so budget the drop in low-voltage paths.

Frequently asked questions

What is the closest functional equivalent to EMT1T2R?

The EMX1T2R is a complementary dual NPN transistor in the same SOT-563 package with similar ratings (50 V, 150 mA, 180 MHz ft). For a dual PNP in a slightly larger package, the UMT1NTN (SOT-323/UMT6) offers identical 50 V, 150 mA, 140 MHz specs. Neither is a drop-in replacement without verifying the pinout and footprint.

What package is EMT1T2R available in?

The EMT1T2R comes in a surface-mount SOT-563 package, also referred to as EMT6 by ROHM. Ordering options include Tape & Reel (TR) for reel-fed assembly and Cut Tape (CT) for prototype quantities.

What is the hFE of EMT1T2R?

The DC current gain (hFE) is a minimum of 120 at a collector current of 1 mA and collector-emitter voltage of 6 V.