EMT1T2R

ROHM Semiconductor

ROHM EMT1T2R dual PNP transistor, 50 V collector-emitter breakdown, 150 mA collector current, 140 MHz transition frequency, 150 mW power dissipation, SOT-563 / EMT6 surface-mount package.

ROHM Semiconductor EMT1T2R
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[IN STOCK] In Stock: 970 pcs
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MOQ 10 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

EMT1T2R specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET type2 PNP (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)150mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 1mA, 6V
Power - max150mW
Frequency - transition140MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-563, SOT-666
Vce saturation (Max) @ ib, ic500mV @ 5mA, 50mA

Technical details

Dual PNP in a 1.6×1.6 mm footprint

The ROHM EMT1T2R packs two matched PNP transistors into a single SOT-563 package (also designated EMT6), saving board area compared to two discrete SOT-23s. Each transistor is rated for 50 V collector-emitter breakdown and 150 mA continuous collector current, with a transition frequency of 140 MHz — fast enough for low-frequency switching regulators, signal-level inverters, and current-source pairs in 24 V or 48 V industrial rails.

Package options for prototype and production

The surface-mount SOT-563 case measures roughly 1.6 mm × 1.6 mm, with a 0.5 mm pitch — verify the land pattern against the EMT6 supplier device package drawing before layout.

Key ratings for BOM fit

The 50 V Vceo breakdown sets the maximum supply rail — comfortable on 24 V systems, marginal on 48 V without derating. The 150 mA collector current handles small-signal loads; for higher current the 150 mW power limit becomes the binding constraint. Vce saturation is 500 mV max at 5 mA base, 50 mA collector — typical for a small-signal PNP, so budget the drop in low-voltage paths.

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