Dual pre-biased NPN pair in SOT-563
The Rohm Semiconductor EMH75T2R integrates two NPN pre-biased transistors in a single SOT-563 package, each with internal base bias resistors R1 of 4.7 kΩ and R2 of 47 kΩ. This eliminates the need for external bias resistors in switching and driver circuits, saving board space and component count. The dual configuration is useful for push-pull stages, differential pairs, or driving two independent loads from a microcontroller output.
50 V breakdown, 100 mA collector current
Collector-emitter breakdown voltage is rated at 50 V, and maximum continuous collector current is 100 mA. The 150 mV saturation voltage at 500 µA base current and 5 mA collector current keeps conduction losses low in logic-level switching. DC current gain (hFE) is a minimum of 80 at 5 mA, 10 V. The 250 MHz transition frequency supports moderate-speed switching up to several megahertz.
