ROHM Semiconductor EMH10T2R — Microcontrollers & Processors (MCU / MPU / DSP)
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ROHM Semiconductor / Microcontrollers & Processors (MCU / MPU / DSP)

ROHM EMH10T2R Dual NPN Pre-Biased Transistor

MPN EMH10T2R
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ROHM EMH10T2R dual NPN pre-biased transistor, 50V VCEO, 100mA IC, 22kΩ base/emitter resistors, 250MHz ft, SOT-563/EMT6 surface mount package.

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[SPEC] Essential Parameters Snapshot Full Specifications (13)
Package / Case SOT-563, SOT-666

Full Technical Specifications

13 Parameters
EMH10T2R specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET type2 NPN - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce56 @ 5mA, 5V
Power - max150mW
Frequency - transition250MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-563, SOT-666
Resistor - base (R1)22kOhms
Resistor - emitter base (R2)22kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA
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Technical Details & Description

Two NPNs with the bias network built in

The ROHM EMH10T2R packs two NPN pre-biased transistors into a single SOT-563 package, each with 22kΩ resistors on both the base and emitter legs. That means you get a matched pair of switching transistors with the bias network already integrated — no external resistors, no extra board area for the divider string. Each transistor handles up to 100 mA collector current with a 50 V collector-emitter breakdown, and the 250 MHz transition frequency keeps switching clean for general-purpose logic-level and driver applications.

150 mW total power — watch the thermal budget in dense layouts

The total power dissipation for both transistors combined is 150 mW. In a tiny SOT-563 package with no exposed pad, that limits continuous current to well below the 100 mA peak — figure derating to maybe 30-40 mA per transistor if both are on simultaneously in still air. The scorch mark tells you when you've pushed it past the SOA: the part gets hot fast in that small body. For switching loads near the 100 mA mark, keep the duty cycle low or move to a larger package.

Frequently asked questions

What package does the EMH10T2R come in?

The EMH10T2R is supplied in a SOT-563 or SOT-666 package with an EMT6 supplier device package designation.

What are the key electrical ratings for the EMH10T2R?

Each NPN transistor has a 50 V collector-emitter breakdown voltage, 100 mA maximum collector current, 22kΩ base and emitter resistors, a minimum DC current gain of 56 at 5 mA and 5 V, and a 250 MHz transition frequency. The total package power dissipation is 150 mW.

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