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ROHM Semiconductor EMG9T2R — Memory (DRAM / SRAM / Flash / EEPROM)

EMG9T2R dual NPN pre-biased transistor, 250 MHz, 150 mW

MPNEMG9T2R
End of Life

ROHM EMG9T2R dual NPN pre-biased transistor array, 50 V VCEO, 100 mA IC, 10kΩ / 10kΩ bias resistors, 250 MHz ft, 150 mW, EMT5 package.

$0.41Ref. price · indicative, final on quote
Packaging6-SMD (5 Leads), Flat Lead
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

EMG9T2R Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type2 NPN - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce30 @ 5mA, 5V
Power - max150mW
Frequency250MHz
PackageTape & Reel (TR); Cut Tape (CT)
Case6-SMD (5 Leads), Flat Lead
Resistor - base (R1)10kOhms
Resistor - emitter base (R2)10kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Two NPNs with the resistors built in

The ROHM EMG9T2R packs two NPN transistors, each with a 10kΩ series base resistor and a 10kΩ resistor from base to emitter, into a single 6-SMD flat-lead EMT5 package. That means one component replaces two discrete transistors plus four resistors — a common trick for cutting pick-and-place cost and board area on digital outputs, relay drivers, and logic-level interface circuits where you need a simple inverter or buffer stage. Each transistor is rated for 50 V collector-emitter breakdown and 100 mA continuous collector current, with a maximum power dissipation of 150 mW for the whole package. The 250 MHz transition frequency keeps switching edges clean up through low-MHz gate drives and serial bus buffers.

Still in production — no end-of-life scramble

ROHM lists the EMG9T2R as active with current lifecycle stage.

Package and mounting

With R1 = R2 = 10kΩ, the base is biased at roughly half the collector supply through the resistor divider when the input is high. The 10kΩ base resistor limits base current from the logic output, so the transistor saturates at about 300 mV with 500 µA base drive into a 10 mA load. The DC current gain minimum of 30 at 5 mA, 5 V means you get reliable saturation even with the built-in base resistor dropping some drive. Off-state leakage is capped at 500 nA, which keeps the output high-impedance when the input is low — no unintended pull-downs on a shared bus.

Frequently asked questions

Is EMG9T2R RoHS compliant?

Yes, EMG9T2R is rated ROHS3 compliant.