Dual NPN pre-biased in a flat-lead SMD package
The ROHM EMG2T2R packs two NPN pre-biased transistors into a single 6-SMD (5 leads), flat-lead EMT5 package. Each transistor integrates a 47 kΩ base resistor and a 47 kΩ base-emitter resistor, so the pair replaces two discrete BJTs plus four external resistors. Collector-emitter breakdown is rated at 50 V, continuous collector current at 100 mA, and the transition frequency hits 250 MHz — fast enough for low-frequency switching, level shifting, and general-purpose digital interfacing on a 5 V or 3.3 V rail. The 150 mW total power limit sets the thermal ceiling for the whole dual package; derate per the board's copper area.
With R1 = R2 = 47 kΩ, the input threshold sits roughly at half the supply voltage when the transistor is at the edge of conduction. The 68 minimum DC current gain at 5 mA, 5 V gives enough headroom to drive a 10 mA load with a Vce(sat) of 300 mV, so the output swing stays close to the rail.