Dual pre-biased NPN in a single EMT5 package
The ROHM EMG1T2R packs two NPN transistors with integrated bias resistors into a flat-lead EMT5 package. Each transistor has its own 22kΩ base resistor (R1) and 22kΩ emitter-base resistor (R2), so the pair is ready to switch without external resistors on the board. Collector-emitter breakdown is rated at 50V, continuous collector current at 100mA, and the transition frequency hits 250MHz — fast enough for switching up to low-MHz gate drive or signal conditioning. The 150mW power dissipation limit across both junctions means the EMT5 package runs warm above 50mA per side in still air; for continuous duty near the 100mA ceiling, a layout with short traces and some copper area under the part helps keep junction temperature in check.
BOM savings with integrated bias
Each channel's built-in 22kΩ base and 22kΩ emitter-base resistors eliminate two discrete resistors per transistor — four resistors saved per EMG1T2R. The 56 minimum DC current gain at 5mA, 5V is typical for a pre-biased digital transistor and sufficient for driving relays, LEDs, or logic-level loads from a 3.3V or 5V MCU output.