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ROHM Semiconductor EMD4T2R — Memory (DRAM / SRAM / Flash / EEPROM)
ROHM Semiconductor

ROHM EMD4T2R NPN/PNP Pre-Biased Dual Transistor, 150 mW

MPNEMD4T2R
End of Life

ROHM EMD4T2R dual NPN/PNP pre-biased transistor, 50 V VCEO, 100 mA IC, 250 MHz fT, 150 mW, SOT-563/SOT-666, EMT6 package.

$0.4Ref. price · indicative, final on quote
EMD4T2R datasheet
PackagingSOT-563, SOT-666
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
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Specifications

EMD4T2R Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce68 @ 5mA, 5V
Power - max150mW
Frequency250MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-563, SOT-666
Resistor - base (R1)47kOhms, 10kOhms
Resistor - emitter base (R2)47kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA

Product details

Dual NPN/PNP pre-biased transistor in a 1.6×1.6 mm footprint

The ROHM EMD4T2R packs one NPN and one PNP pre-biased transistor into a single SOT-563 or SOT-666 package (supplier device package EMT6), cutting the component count for level shifters, MOSFET gate drivers, and general-purpose switching interfaces. Each transistor integrates the bias resistors — 47 kΩ for the base and 47 kΩ for the emitter-base on the NPN side, 10 kΩ for the base on the PNP side — so the design saves two external resistor pairs per channel.

At 150 mW maximum power dissipation, the combined junction temperature rise is the binding constraint. The saturation voltage is specified at 300 mV at 10 mA (NPN) and 5 mA (PNP).

Frequently asked questions

What are the integrated resistor values for EMD4T2R?

The NPN transistor has a 47 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2). The PNP transistor has a 10 kΩ base resistor (R1) and no separate emitter-base resistor — the emitter-base is shorted internally for the PNP side. These values set the turn-on threshold and limit base current without external components.

What is the closest functional equivalent or replacement for EMD4T2R?

The EMD12T2R is a pin-compatible sibling in the same EMT6 package with the same 50 V / 100 mA / 250 MHz ratings but different bias resistor values (47 kΩ / 47 kΩ for both NPN and PNP). If the resistor values in your design are flexible, the EMD12T2R can serve as a direct second-source. For an all-NPN dual pre-biased transistor in the same footprint, the EMG2T2R is an option.