Dual NPN/PNP pre-biased transistor in a 1.6×1.6 mm footprint
The ROHM EMD4T2R packs one NPN and one PNP pre-biased transistor into a single SOT-563 or SOT-666 package (supplier device package EMT6), cutting the component count for level shifters, MOSFET gate drivers, and general-purpose switching interfaces. Each transistor integrates the bias resistors — 47 kΩ for the base and 47 kΩ for the emitter-base on the NPN side, 10 kΩ for the base on the PNP side — so the design saves two external resistor pairs per channel.
At 150 mW maximum power dissipation, the combined junction temperature rise is the binding constraint. The saturation voltage is specified at 300 mV at 10 mA (NPN) and 5 mA (PNP).