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ROHM Semiconductor EMD29T2R — Memory (DRAM / SRAM / Flash / EEPROM)

ROHM EMD29T2R Dual Pre-Biased Transistor, SOT-563

MPNEMD29T2R
End of Life

ROHM EMD29T2R dual NPN/PNP pre-biased transistor, SOT-563 package, 120 mW max power, 50 V NPN / 12 V PNP VCEO, 100 mA / 500 mA Ic, integrated bias resistors R1 1 kΩ / 10 kΩ, R2 10 kΩ.

$0.46Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

EMD29T2R Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V, 12V
Current - collector (Ic)100mA, 500mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce30 @ 5mA, 5V / 140 @ 100mA, 2V
Power - max120mW
Frequency250MHz, 260MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-563, SOT-666
Resistor - base (R1)1kOhms, 10kOhms
Resistor - emitter base (R2)10kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA

Product details

Dual NPN/PNP pre-biased pair in a 1.6 × 1.6 mm footprint

The ROHM EMD29T2R packs one NPN and one PNP pre-biased transistor into a single SOT-563 package (EMT6 supplier device package), saving board space compared to two discrete SOT-23s. Each side integrates the base-bias resistor network — R1 is 1 kΩ (NPN) and 10 kΩ (PNP), with a shared R2 of 10 kΩ — so the turn-on threshold is set without external resistors.

50 V NPN, 12 V PNP — watch the rail voltage

The NPN side is rated for 50 V collector-emitter breakdown, but the PNP side is limited to 12 V. If your supply rail exceeds 12 V, the PNP transistor is the constraint — keep the collector voltage under 12 V or use the NPN side only. Saturation voltage is specified at 300 mV for both sides under their respective test conditions (500 µA base, 10 mA collector for NPN; 5 mA base, 100 mA collector for PNP), which is typical for pre-biased parts and leaves adequate headroom for 3.3 V logic.

120 mW power budget in a tiny package

Maximum power dissipation is 120 mW for the whole device. In a dense SOT-563 layout with limited copper, continuous operation near the 100 mA / 500 mA limits will hit that ceiling quickly — derate for ambient temperature and check the junction temperature if both transistors are conducting simultaneously. The surface-mount SOT-563 (1.6 × 1.6 mm typical) is suited for automated assembly and reflow soldering.

Frequently asked questions

What is the closest functional equivalent to the EMD29T2R?

The EMD12T2R is a similar dual NPN/PNP pre-biased pair in the same SOT-563 package, but its bias resistors are both 47 kΩ, giving a different turn-on threshold. The EMD4T2R also pairs NPN/PNP with a 47 kΩ / 10 kΩ resistor mix. Neither is a direct drop-in — verify the base resistor values against your circuit before substituting.

Is the EMD29T2R Pb-free?

Yes, the EMD29T2R is ROHS3 compliant, which restricts lead and other hazardous substances.