Dual complementary pre-biased pair in a single SOT-563
The ROHM EMD12T2R packs one NPN and one PNP pre-biased transistor into a single SOT-563 package, saving board space versus two discrete bias-resistor networks. Each transistor integrates a 47kΩ base resistor (R1) and a 47kΩ emitter-base resistor (R2), eliminating the need for external bias components in low-current switching and interface applications. Collector-emitter breakdown is rated at 50V, with a maximum collector current of 100mA per transistor — enough for driving relay coils, LED indicators, logic-level translation, or as a small-signal inverter pair.
150 mW total — watch the thermal budget
The total power dissipation for the package is 150mW. That ceiling applies to the sum of both transistors under continuous operation. In a 50V, 100mA switching application the instantaneous dissipation can spike above that if the load is inductive or the switching edge is slow — derate per the SOT-563 thermal resistance. The 250MHz transition frequency means it handles fast edges for a small-signal part, but the 150mW limit keeps it out of linear-regulator service.