Dual PNP pre-biased pair in a 1.6×1.6 mm footprint
The ROHM EMB2T2R integrates two PNP transistors, each with 47 kΩ base and emitter-base resistors, in a single SOT-563 package (supplier device package EMT6). This pre-biased configuration eliminates two external resistors per transistor, shrinking the PCB footprint for low-current switching, level shifting, or gate drive applications where board space is tight. Each transistor is rated for 50 V collector-emitter breakdown and 100 mA continuous collector current, with a 250 MHz transition frequency. The 150 mW total power dissipation ceiling sets the thermal budget — in a typical 25°C ambient, the part can handle both transistors conducting simultaneously at moderate duty cycles, but derating is needed above 70°C or with continuous high-side drive. The 300 mV saturation voltage at 500 µA base current and 10 mA collector current is typical for a small-signal PNP — adequate for driving logic inputs or low-power relays, but not for linear regulation where Vce(sat) eats into headroom.