DTD543EETL

ROHM Semiconductor

TRANS PREBIAS NPN 150MW EMT3

ROHM Semiconductor DTD543EETL
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DTD543EETL specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown12 V
Current - collector (Ic)500 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce115 @ 100mA, 2V
Power - max150 mW
Frequency - transition260 MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-75, SOT-416
Resistor - base (R1)4.7 kOhms
Resistor - emitter base (R2)4.7 kOhms
Vce saturation (Max) @ ib, ic300mV @ 2.5mA, 50mA
DTD543EETL
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