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ROHM Semiconductor BD2320EFJ-LAE2 — Analog & Data Acquisition

ROHM Semiconductor BD2320EFJ-LAE2

MPNBD2320EFJ-LAE2
End of Life

100 V VB 3.5 A/4.5 A PEAK CURREN

$3.01Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width) Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BD2320EFJ-LAE2 specifications
ParameterValue
Gate typeN-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage7.5V ~ 14.5V
Logic voltage - VIL, VIH1.7V, 1.5V
High side voltage - max (Bootstrap)100 V
Current - peak output (Source, sink)3.5A, 4.5A
Operating temperature-40°C ~ 125°C (TA)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width) Exposed Pad
Number of drivers2
Driven configurationHigh-Side and Low-Side
Rise (Fall time)8ns, 6ns