RS1G260MNTB

Rohm Semiconductor

MOSFET N-CH 40V 26A 8HSOP

Rohm Semiconductor RS1G260MNTB
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[IN STOCK] In Stock: 2 pcs
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RS1G260MNTB specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C26A (Ta), 80A (Tc)
Power dissipation3W (Ta), 35W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs3.3mOhm @ 26A, 10V
Gate charge (Qg) (Max) @ vgs44 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2988 pF @ 20 V
RS1G260MNTB
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