DTC115EUAT106

Rohm Semiconductor

TRANS PREBIAS NPN 50V UMT3

Rohm Semiconductor DTC115EUAT106
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DTC115EUAT106 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)20 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce82 @ 5mA, 5V
Power - max200 mW
Frequency - transition250 MHz
PackageTape & Reel (TR) Cut Tape (CT)
CaseSC-70, SOT-323
Resistor - base (R1)100 kOhms
Resistor - emitter base (R2)100 kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA
DTC115EUAT106
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