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Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DTC114TSATP specifications
ParameterValue
MountingThrough Hole
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce100 @ 1mA, 5V
Power - max300 mW
Frequency250 MHz
PackageTape & Box (TB)
CaseSC-72 Formed Leads
Resistor - base (R1)10 kOhms
Vce saturation (Max) @ ib, ic300mV @ 1mA, 10mA