DTC114GU3T106

Rohm Semiconductor

Rohm Semiconductor DTC114GU3T106
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DTC114GU3T106 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce30 @ 5mA, 5V
Power - max200 mW
Frequency - transition250 MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-70, SOT-323
Resistor - emitter base (R2)10 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA
DTC114GU3T106
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