DTC013ZMT2L

Rohm Semiconductor

TRANS PREBIAS NPN 0.15W VMT3

Rohm Semiconductor DTC013ZMT2L
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MOQ 20 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DTC013ZMT2L specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce30 @ 5mA, 10V
Power - max150 mW
Frequency - transition250 MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-723
Resistor - base (R1)1 kOhms
Resistor - emitter base (R2)10 kOhms
Vce saturation (Max) @ ib, ic150mV @ 500µA, 5mA
DTC013ZMT2L
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