2SK2103T100

Rohm Semiconductor

Rohm Semiconductor 2SK2103T100
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[IN STOCK] In Stock: 339 pcs
$0.57/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

2SK2103T100 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C2A (Ta)
Power dissipation500mW (Ta)
Operating temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-243AA
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs400mOhm @ 1A, 10V
Input capacitance (Ciss) (Max) @ vds230 pF @ 10 V
2SK2103T100
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