2SC5876T106Q

Rohm Semiconductor

Rohm Semiconductor 2SC5876T106Q
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

2SC5876T106Q specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown60 V
Current - collector (Ic)500 mA
Current - collector cutoff1µA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 50mA, 2V
Power - max200 mW
Frequency - transition300MHz
Operating temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-70, SOT-323
Vce saturation (Max) @ ib, ic300mV @ 10mA, 100mA
2SC5876T106Q
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