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Renesas Electronics UPA2814T1S-E2-AT
Renesas Electronics

UPA2814T1S-E2-AT P-Channel MOSFET, 30V, 24A, 7.8 mOhm

MPNUPA2814T1S-E2-AT
End of Life

Renesas UPA2814T1S--AT, P-Channel MOSFET, 30 Vdss, 24 A continuous drain, 7.8 mOhm max Rds(on) at 5V drive, 74 nC gate charge, 8-PowerWDFN / 8-HWSON (3.3x3.3) package, surface mount, active.

$0.54883Ref. price · indicative, final on quote
UPA2814T1S-E2-AT datasheet
Packaging8-PowerWDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

UPA2814T1S-E2-AT Technical Specifications
ParameterValue
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C24A (Tc)
Power dissipation1.5W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerWDFN
Rds on (Max) @ id, vgs7.8mOhm @ 24A, 5V
Gate charge (Qg) (Max) @ vgs74 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2800 pF @ 10 V

Product details

P-channel load switch for 5V-driven rails

The UPA2814T1S-E2-AT: The UPA2814T1S--AT P-channel MOSFET has a 7.8 mOhm max on-resistance at 5V gate drive, suiting high-side load switching and reverse-polarity protection circuits driven from a 5V rail.

On-resistance at the drive voltages that matter

Rds(on) is specified at two drive voltages: 7.8 mOhm max at 5V, 24 A, and the same 7.8 mOhm figure also applies at 10V drive per the datasheet's drive voltage range of 4.5V to 10V. The 5V rating is the one to size against in a 5V-only system — the part does not require a 10V rail to hit its rated on-resistance. The 74 nC gate charge at 10V sets the switching loss: at 100 kHz the average gate-drive current is 7.4 mA, well within a standard gate driver's capability.

Thermal budget in the HWSON footprint

The 8-PowerWDFN (also called 8-HWSON) exposes a large thermal pad on the bottom of the 3.3x3.3 mm package. Maximum power dissipation is 1.5 W at 25°C ambient — but that rating assumes the pad is soldered to a copper land on the PCB with adequate via array to the inner ground plane. Without that thermal connection, the junction-to-ambient resistance rises and the 24 A continuous rating at 25°C case temperature cannot be sustained. The junction temperature limit is 150°C.

Frequently asked questions

What is the exact Rds(on) of UPA2814T1S--AT at 10V?

The datasheet specifies 7.8 mOhm max at 24 A with 5V gate drive; the same 7.8 mOhm max applies at 10V drive because the drive voltage range (4.5V to 10V) covers both. The part achieves its rated on-resistance without needing a 10V rail.

Is UPA2814T1S--AT a direct replacement for NDP6020P?

The evidence does not contain a cross-reference to NDP6020P, so a direct-replacement claim cannot be made. The UPA2814T1S--AT is a P-channel MOSFET with a 30 V drain-source rating and a 3.3x3.3 mm HWSON package — confirm the NDP6020P's package, pinout, and on-resistance before substituting.

Does UPA2814T1S--AT require a specific gate drive voltage for optimal Rds(on)?

The drive voltage range for achieving the rated Rds(on) is 4.5V to 10V. At 5V gate drive the on-resistance is already at the specified 7.8 mOhm max, so a 10V rail is not necessary for optimal performance — the part is designed for 5V-driven circuits.

Is UPA2814T1S--AT RoHS compliant?

Yes, the part is listed as ROHS3 compliant.