SRAM - Asynchronous, 64Kbit (8K x 8), Parallel interface, 70 ns access time, 4.5V ~ 5.5V supply, -55°C ~ 125°C, Through Hole 28-CDIP (0.300", 7.62mm).
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Through Hole |
| Voltage | 4.5V ~ 5.5V |
| Memory interface | Parallel |
| Operating temperature | -55°C ~ 125°C (TA) |
| Package | Bulk |
| Technology | SRAM - Asynchronous |
| Access time | 70 ns |
| Memory size | 64Kbit |
| Memory format | SRAM |
| Case | 28-CDIP (0.300\", 7.62mm) |
| Memory organization | 8K x 8 |
| Write cycle time - word, page | 70ns |
Write cycle time 70 ns guaranteed across this span.
28-CDIP (0.300" body width, 7.62 mm) through-hole mounted. Hermetic ceramic construction. Bulk packaging.
Active product status. No NRND or EOL notice on record.
The access time is 70 ns, and the write cycle time (word, page) is also 70 ns. This is the cycle-limiting spec for bus timing; at 5V ±10% it supports a 14 MHz equivalent read/write rate without wait states for 8-bit and 16-bit legacy processors.
The 7164L70TDB and 7164L70DB share the same 70 ns access time and 64Kbit density, but the 'T' suffix indicates the 28-CDIP hermetic package and military temperature range. The 7164L70DB may be a plastic DIP or commercial temperature variant; verify package and temperature grade before substituting.