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Renesas Electronics UPA2738GR-E1-AX
Renesas Electronics

UPA2738GR-E1-AX MOSFET, P-Ch 30V 10A 8-SOP, 15mOhm Rds(on)

MPNUPA2738GR-E1-AX
End of Life

Renesas UPA2738GR--AX, P-Channel MOSFET, 30V Vdss, 10A Id, 15mOhm Rds(on) at 10V, 37nC Qg, 8-SOP surface-mount package, 150°C junction temperature.

$1.28Ref. price · indicative, final on quote
UPA2738GR-E1-AX datasheet
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

UPA2738GR-E1-AX Technical Specifications
ParameterValue
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C10A (Ta)
Power dissipation2.5W (Ta)
Operating temperature150°C
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Rds on (Max) @ id, vgs15mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs37 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1450 pF @ 10 V

Product details

P-channel load switch for 30 V rails

The UPA2738GR-E1-AX: Gate charge is 37 nC at 10 V; input capacitance is 1450 pF at 10 V drain bias.

Sizing the gate drive and thermal budget

At 4.5 V the on-resistance is higher than the 15 mOhm at 10 V. Maximum power dissipation is 2.5 W at 25 °C ambient, derated to zero at the 150 °C junction limit. In a 10 A continuous application at 15 mOhm the I²R loss is 1.5 W, leaving 1 W of headroom for ambient temperature rise and PCB copper area. The SOIC-8 (8-SOP) package relies on the board copper for heat spreading — a 1-inch² pad under the drain tabs is typical.

Frequently asked questions

What is the Rds(on) of the UPA2738GR--AX?

The maximum on-resistance is 15 mOhm at a drain current of 10 A and a gate-to-source voltage of 10 V. At a 4.5 V gate drive the Rds(on) is higher — the datasheet curve should be consulted for the exact value at the operating point.