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Renesas Electronics RJP60F5DPK-01#T0

RJP60F5DPK-01#T0 IGBT 600V 80A TO-220-3 Full Pack

MPNRJP60F5DPK-01#T0
End of Life

Renesas RJP60F5DPK-01#T0 IGBT, 600 V Vces, 80 A Ic, 260.4 W max power, 74 nC gate charge, 53 ns/90 ns switching, TO-220-3 Full Pack, Through Hole, 150°C Tj.

$3.7Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

RJP60F5DPK-01#T0 Technical Specifications
ParameterValue
Input typeStandard
Mounting typeThrough Hole
Voltage - collector emitter breakdown600 V
Current - collector (Ic)80 A
Current - collector pulsed160 A
Power - max260.4 W
Operating temperature150°C (TJ)
PackageTube
Gate charge74 nC
CaseTO-220-3 Full Pack
Test condition400V, 30A, 5Ohm, 15V
Td (on/off) @ 25°C53ns/90ns
Vce(on) (Max) @ vge, ic1.8V @ 15V, 40A

Product details

600 V, 80 A NPT IGBT in TO-220-3 Full Pack

The Renesas RJP60F5DPK-01#T0 is an N-channel IGBT rated for 600 V collector-emitter breakdown and 80 A continuous collector current, with a pulsed current capability of 160 A. It is housed in a TO-220-3 Full Pack through-hole package, providing full isolation between the mounting tab and the collector — simplifying heatsink attachment and eliminating the need for an insulating pad in many designs. With a gate charge of 74 nC and switching delays of 53 ns turn-on and 90 ns turn-off at 25°C under test conditions of 400 V, 30 A, and a 5 Ohm gate resistor, this IGBT is suited for hard-switched applications such as motor drives, UPS inverters, and induction heating where moderate switching frequencies (typically 10–30 kHz) are used.

Switching performance and gate drive budget

The 74 nC gate charge sets the drive current requirement. The 53 ns/90 ns delay times allow dead-time settings for half-bridge topologies. Saturation voltage is 1.8 V typical at 15 V gate drive and 40 A collector current. Maximum power dissipation is 260.4 W.

Package and mounting — TO-220-3 Full Pack

The TO-220-3 Full Pack (also referred to as TO-3P in the supplier device package field) is a fully moulded through-hole package with an isolated mounting surface. No additional insulating washer is needed between the device and the heatsink, which reduces assembly time and improves thermal coupling. The package is supplied in Tube form. Maximum junction temperature is rated at 150°C, so the thermal design must keep Tj below this limit under worst-case load and ambient conditions. The 600 V breakdown voltage provides adequate margin for 230 VAC rectified bus (≈325 VDC) and 400 VDC rails common in three-phase industrial drives.

Lifecycle and compliance

It is ROHS3 compliant, with no exemptions that would restrict its use in European or global markets. For dual-sourcing or lifecycle risk mitigation, a parametric search for 600 V, 80 A IGBTs in TO-220-3 Full Pack from other vendors (e.g., Infineon, STMicroelectronics) would yield functionally similar alternatives, but pinout and gate drive characteristics should be verified against the target application.

Frequently asked questions

Is RJP60F5DPK-01#T0 RoHS compliant?

Yes, the RJP60F5DPK-01#T0 is ROHS3 compliant, meeting the latest EU directive requirements.

What is the gate charge of RJP60F5DPK-01#T0?

The total gate charge is 74 nC, which determines the average gate drive current needed for a given switching frequency.