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Renesas Electronics RJK6006DPP-A0#T2

RJK6006DPP-A0#T2 MOSFET N-Ch 600V 10A TO-220FP, 920mOhm

MPNRJK6006DPP-A0#T2
End of Life

Renesas RJK6006DPP-A0#T2, N-Channel MOSFET, 600V Vdss, 10A Id, 920mOhm Rds(on) at 5A/10V, TO-220-3 Full Pack, Through Hole, Tube.

$3.47Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

RJK6006DPP-A0#T2 Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Ta)
Power dissipation30W (Ta)
Operating temperature150°C
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Rds on (Max) @ id, vgs920mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs30 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1100 pF @ 25 V

Product details

600 V, 10 A — the through-hole workhorse for offline power

The TO-220 Full Pack (TO-220FP) isolates the tab from the drain, so no mica washer or insulating pad is needed when bolting to a chassis or heatsink — but the 30 W maximum power dissipation means the thermal path through the full-pack epoxy limits how much heat can be sunk before the 150 °C junction temperature ceiling is hit.

Package and mounting — TO-220FP through-hole

Through-hole TO-220-3 Full Pack, supplier device package TO-220FP — the three leads are 0.025-inch thick and sit on 0.100-inch pitch, standard for hand-solder or wave-solder assembly on single-sided or double-sided boards. Shipped in Tube — not tape-and-reel, so pick-and-place is not an option; this is a bench-assembly, repair, or low-volume production part.

ROHS3 compliant — no exemptions for lead in solder or other restricted substances, so it passes into European and RoHS-regulated markets without paperwork issues.

Gate drive and switching — what the numbers mean

Gate charge is 30 nC at 10 V — a 10 V gate-drive rail can switch this FET at 100 kHz with about 3 mA average gate-drive current, well within the capability of a standard bootstrap driver. Input capacitance Ciss is 1100 pF at 25 V — this is moderate; the gate-driver output impedance and series gate resistor should be sized to keep the rise/fall times under 100 ns for hard-switching topologies. The ±30 V Vgs maximum gives headroom for gate-drive transients — common in flyback and half-bridge designs where the gate drive can overshoot the 15 V rail on turn-off edges.

Frequently asked questions

What is the Rds(on) of RJK6006DPP-A0#T2?

Maximum Rds(on) is 920 mOhm at 5 A drain current with 10 V gate drive.

What is the equivalent or replacement for RJK6006DPP-A0#T2?

No direct pin-compatible second-source is listed on the Renesas cross-reference. The NP179N055TUK--AY is a different class — 55 V / 180 A surface-mount automotive part — and is not a functional replacement for this 600 V through-hole MOSFET.

What package does RJK6006DPP-A0#T2 come in?

TO-220-3 Full Pack (TO-220FP), through-hole, shipped in Tube.