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Renesas Electronics RJK5033DPP-M0#T2
Renesas Electronics

RJK5033DPP-M0#T2 MOSFET, N-Channel 500V 6A TO-220FL

MPNRJK5033DPP-M0#T2
End of Life

Renesas RJK5033DPP-M0#T2, N-Channel MOSFET, 500 V Vdss, 6 A continuous drain, 1.3 Ohm Rds(on) at 10 V, TO-220-3 Full Pack (TO-220FL), Through Hole, ROHS3 compliant, Active.

$2.98Ref. price · indicative, final on quote
RJK5033DPP-M0#T2 datasheet
PackagingTO-220-3 Full Pack
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

RJK5033DPP-M0#T2 Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Ta)
Power dissipation27.4W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Rds on (Max) @ id, vgs1.3Ohm @ 3A, 10V
Input capacitance (Ciss) (Max) @ vds600 pF @ 25 V

Product details

500 V N-channel in a fully isolated TO-220FL

The RJK5033DPP-M0#T2: The full-pack moulding isolates the tab electrically, so the mounting screw or clip does not need a separate insulator — the back of the package is the isolation barrier. This saves one assembly step and a mica pad per board position.

1.3 Ohm Rds(on) — conduction loss at 3 A

At that operating point the conduction loss is I²R = 3² × 1.3 = 11.7 W, which sits inside the 27.4 W power dissipation limit at the case. The gate drive voltage is 10 V nominal — the Rds(on) is not characterised at 5 V logic-level drive, so a 12 V or 15 V gate supply is the intended bias.

Input capacitance and switching edge

Input capacitance Ciss is 600 pF maximum at 25 V drain-source. For a 500 V part this is a moderate figure.

Active lifecycle — BOM line is not at LTB risk

ROHS3 compliance is confirmed.

Frequently asked questions

What is the Rds(on) of the RJK5033DPP-M0#T2?

The maximum Rds(on) is 1.3 Ohm at a drain current of 3 A and a gate-source voltage of 10 V. This is the conduction loss spec for the 3 A operating point.