500 V, 5 A N-channel in a full-pack TO-220
The RJK5030DPP-M0#T2: The part is built on a standard planar MOSFET process and is housed in a TO-220-3 Full Pack (TO-220FL) through-hole package — the plastic-moulded back means there is no exposed metal tab, so the thermal path is through the package body only.
1.6 Ohm Rds(on) — what it costs in conduction loss
At 2 A drain current and 10 V gate drive, the maximum Rds(on) is 1.6 Ohm. The 28.5 W power dissipation limit at the case is the thermal ceiling.
Gate charge and input capacitance — driver load
The total gate charge at 10 V is 13 nC, and the input capacitance (Ciss) is 550 pF at 25 V drain-source. These are low enough that a standard gate driver IC can switch the MOSFET at moderate frequencies.
Full-pack package — heatsinking reality
The TO-220FL (full-pack) package has no exposed metal tab — the back of the package is moulded plastic. That means the thermal resistance from junction to case is higher than a standard TO-220 with a metal tab. The 28.5 W power dissipation limit at the case temperature assumes a heatsink attached to the plastic body with a thermally conductive pad or a clip. For continuous operation above a few watts, a heatsink is mandatory. The through-hole mounting suits point-to-point wiring or a PCB with drilled holes for the leads.
It is ROHS3 compliant.