150 V N-Channel MOSFET in a compact WPAK(3F) package
The Renesas RJK1576DPA-00#J5A is an N-channel power MOSFET rated for 150 V drain-to-source voltage and 25 A continuous drain current at 25°C case temperature. It comes in an 8-PowerVDFN package — the WPAK(3F) (5x6) variant — and is supplied on Tape & Reel (TR) for automated assembly. The device is built on a standard MOSFET (Metal Oxide) technology and requires a 10 V gate drive to achieve its rated 58 mOhm maximum on-resistance at 12.5 A.
Package and mounting
The 8-PowerVDFN package (WPAK(3F) 5x6 mm footprint) is a surface-mount outline with a large exposed pad for thermal transfer to the PCB. The junction-to-case thermal path is the primary heat-removal route; the PCB copper area and vias under the pad are part of the thermal design, not optional. The ±30 V maximum gate-source rating gives headroom for gate-drive transients, but the 10 V drive voltage specified for the Rds(on) measurement is the practical operating point.
Lifecycle and compliance
The RJK1576DPA-00#J5A carries an Active product status and is ROHS3 compliant. No last-time-buy or end-of-life notice is on record, so the part is suitable for both new designs and ongoing production builds. The 150°C maximum junction temperature rating supports operation in thermally constrained environments such as enclosed power supplies or motor-drive compartments.