Renesas RJK1052DPB-00#J5 N-Channel MOSFET, 100 V Vdss, 20 A Id, 20 mOhm Rds(on) @ 10 V, 29 nC Qg, LFPAK (SC-100, SOT-669) surface-mount.
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 20A (Ta) |
| Power dissipation | 55W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | SC-100, SOT-669 |
| Rds on (Max) @ id, vgs | 20mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 29 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 4160 pF @ 10 V |
The RJK1052DPB-00#J5: N-channel MOSFET with 100 V drain-source rating, 20 A continuous drain current, and 20 mOhm Rds(on) at 10 V gate drive.
20 mOhm Rds(on) at Vgs=10 V and 10 A. 29 nC total gate charge at 4.5 V. 4160 pF input capacitance at 10 V drain-source.
Yes — the package / case is listed as SC-100, SOT-669, and the supplier device package is LFPAK. The SOT-669 footprint is the standard land pattern for this part.