Renesas Electronics
Renesas RJK0853DPB-00#J5 N-Channel MOSFET, 80 V drain-to-source, 40 A continuous drain, 8 mOhm Rds(on) at 20 A, 10 V, LFPAK surface-mount package, ROHS3 compliant.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 40A (Ta) |
| Power dissipation | 65W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | SC-100, SOT-669 |
| Rds on (Max) @ id, vgs | 8mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 40 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 6170 pF @ 10 V |
The RJK0853DPB-00#J5: Gate charge is 40 nC at 4.5 V drive; input capacitance is 6170 pF at 10 V Vds.
The device is housed in an SC-100 / SOT-669 package, designated LFPAK. Power dissipation is 65 W at the case.
