Renesas RJK0853DPB-00#J5 N-Channel MOSFET, 80 V drain-to-source, 40 A continuous drain, 8 mOhm Rds(on) at 20 A, 10 V, LFPAK surface-mount package, ROHS3 compliant.
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 40A (Ta) |
| Power dissipation | 65W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | SC-100, SOT-669 |
| Rds on (Max) @ id, vgs | 8mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 40 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 6170 pF @ 10 V |
The RJK0853DPB-00#J5: Gate charge is 40 nC at 4.5 V drive; input capacitance is 6170 pF at 10 V Vds.
The device is housed in an SC-100 / SOT-669 package, designated LFPAK. Power dissipation is 65 W at the case.
The maximum Rds(on) is 8 mOhm at a drain current of 20 A with a 10 V gate-to-source voltage, as specified in the datasheet. This is the conduction loss figure to use in your thermal calculation at the rated operating point.
We do not maintain live stock visibility into DigiKey or Mouser inventory. The part is available to order through independent distribution channels — submit an RFQ for current availability and lead time.
Yes, the RJK0853DPB-00#J5 is ROHS3 compliant, meaning it meets the European ROHS directive for restriction of hazardous substances, including lead-free requirements.