60 V N-channel in an 8-WPAK — what the ratings tell the BOM engineer
The Renesas RJK0658DPA-00#J5A is a 60 V N-channel power MOSFET in a compact 8-WFDFN exposed-pad package supplied as 8-WPAK.
Gate charge and switching — what 19.4 nC means for the driver
Total gate charge is 19.4 nC at 10 V. At a 100 kHz switching frequency, the average gate-drive current required is roughly 1.94 mA — well within the capability of a standard MOSFET driver. The 1580 pF input capacitance at 10 V drain-source confirms the gate is not excessively large for moderate-speed switching in a 48 V or 12 V rail. The drive voltage for minimum Rds(on) is specified at 10 V, with a maximum gate-source rating of ±20 V. This part will not fully enhance at 5 V logic-level gate drive; plan for a 10 V gate supply or a dedicated gate-driver IC.
Thermal budget — 50 W in an 8-WPAK
Maximum power dissipation is 50 W at the case temperature. The 8-WFDFN exposed-pad package relies on the PCB copper area under the pad for heat spreading. A 2-ounce copper pour of at least 1 square inch on the top layer, with thermal vias to an inner ground plane, is the typical starting point to keep junction temperature within the 150 °C maximum.