Renesas Electronics
Renesas RJK0656DPB-00#J5, N-Channel MOSFET, 60V Vdss, 40A Id, 5.6mOhm Rds(on) at 10V, LFPAK (SC-100/SOT-669) surface-mount package, 150°C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 40A (Ta) |
| Power dissipation | 65W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | SC-100, SOT-669 |
| Rds on (Max) @ id, vgs | 5.6mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 40 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3000 pF @ 10 V |
The 150°C maximum junction temperature (Tj) sets the derating curve; at elevated ambient the 40 A continuous rating drops significantly, so the actual load current must be checked against the thermal impedance of the board layout.
It is ROHS3 compliant, meeting the latest lead-free and restricted-substance requirements for EU and global markets.
