Renesas RJK0655DPB-00#J5, N-Channel MOSFET, 60 V Vdss, 35 A Id, 6.7 mOhm Rds(on) at 10 V, 35 nC Qg, LFPAK (SOT-669) package, surface mount, active.
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 35A (Ta) |
| Power dissipation | 60W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | SC-100, SOT-669 |
| Rds on (Max) @ id, vgs | 6.7mOhm @ 17.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 35 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2550 pF @ 10 V |
Total gate charge is 35 nC at 10 V. That is a moderate figure — a standard gate driver delivering 1 A peak can switch this FET in the tens of nanoseconds. The input capacitance of 2550 pF at 10 V drain is consistent with a device optimised for hard-switching in the 100–500 kHz range.
Rated for 60 W dissipation at the case, the real thermal performance depends on the PCB copper area and via count under the pad.
Yes, the RJK0655DPB-00#J5 is ROHS3 compliant.