Renesas Electronics
Renesas RJK0652DPB-00#J5, N-Channel MOSFET, 60 V Vdss, 35 A Id, 7 mOhm Rds(on) at 10 V, LFPAK (SOT-669), Surface Mount, Tape & Reel.
MOQ 1 · Tape & Reel (TR) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 35A (Ta) |
| Power dissipation | 55W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | SC-100, SOT-669 |
| Rds on (Max) @ id, vgs | 7mOhm @ 17.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 29 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 4100 pF @ 10 V |
The RJK0652DPB-00#J5: Maximum Rds(on) is 7 mOhm at 17.5 A drain current with 10 V gate drive; the drive voltage range of 4.5 V to 10 V allows logic-level gate drive from a 5 V rail, though the 4.5 V Rds(on) will be higher than the 10 V figure. Input capacitance Ciss is 4100 pF at 10 V drain-source, and the maximum gate charge is 29 nC at 4.5 V.
Maximum power dissipation is 55 W at case temperature, with a maximum junction temperature of 150 °C.
