2.1 mOhm at 30 A — the conduction-loss floor
The RJK0328DPB-01#J0: The maximum Rds(on) is 2.1 mOhm at Vgs=10 V and Id=30 A. At 4.5 V drive the on-resistance is also specified.
Total gate charge is 42 nC at 4.5 V. Input capacitance Ciss is 6380 pF at 10 V drain bias.
Housed in an LFPAK (SC-100, SOT-669) surface-mount package with an exposed drain pad. The LFPAK footprint is shared across many Renesas power MOSFETs, so a layout done for one part in this family carries over to others without a board spin.
It is ROHS3 compliant.