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Renesas Electronics RJH65T14DPQ-A0#T0
Renesas Electronics

RJH65T14DPQ-A0#T0 IGBT, 650V 100A Trench, TO-247A, Active

MPNRJH65T14DPQ-A0#T0
End of Life

Renesas RJH65T14DPQ-A0#T0, Trench IGBT, 650 V Vces, 100 A Ic, 1.75 V Vce(on) @ 50A/15V, 80 nC Qg, 250 W, TO-247A, 175 °C Tj, Active, ROHS3.

$4.79Ref. price · indicative, final on quote
RJH65T14DPQ-A0#T0 datasheet
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

RJH65T14DPQ-A0#T0 Technical Specifications
ParameterValue
IGBT typeTrench
Input typeStandard
Mounting typeThrough Hole
Voltage - collector emitter breakdown650 V
Current - collector (Ic)100 A
Power - max250 W
Operating temperature175°C (TJ)
PackageTube
Gate charge80 nC
CaseTO-247-3
Test condition400V, 50A, 10Ohm, 15V
Switching energy1.3mJ (on), 1.2mJ (off)
Td (on/off) @ 25°C38ns/125ns
Vce(on) (Max) @ vge, ic1.75V @ 15V, 50A
Reverse recovery time250 ns

Product details

The Renesas RJH65T14DPQ-A0#T0 is a 650 V, 100 A trench-gate IGBT in a TO-247A through-hole package. The trench structure delivers a low on-state voltage of 1.75 V typical at 50 A and 15 V gate drive.

Switching loss and gate drive — 80 nC Qg, 1.3 mJ / 1.2 mJ Eon/Eoff

Total gate charge is 80 nC. Switching energy at 400 V, 50 A, 10 Ω gate resistor, 15 V gate drive is 1.3 mJ turn-on and 1.2 mJ turn-off. Turn-on delay is 38 ns and turn-off delay is 125 ns at 25 °C, giving a fast enough edge for hard-switching topologies. The co-packaged diode has a reverse recovery time of 250 ns, which contributes to turn-on loss and EMI in bridge-leg configurations.

Thermal headroom — 175 °C junction temperature

Rated for a maximum junction temperature of 175 °C. The TO-247A package variant has an enlarged copper tab for improved heat transfer.

ROHS3 compliant.

Frequently asked questions

What is the Vce(on) of RJH65T14DPQ-A0#T0?

The maximum Vce(on) is 1.75 V at 15 V gate drive and 50 A collector current.

What is the switching energy of RJH65T14DPQ-A0#T0?

At 400 V, 50 A, 10 Ω gate resistor, and 15 V gate drive, the turn-on energy is 1.3 mJ and turn-off energy is 1.2 mJ.