Trench IGBT for hard-switched power stages
The Renesas RJH65T04BDPMA0#T2F is a trench-gate IGBT rated for 650 V collector-emitter breakdown and 60 A continuous collector current, housed in a through-hole TO-3PFP package (SC-94). The trench structure delivers a typical Vce(on) of 1.95 V at 15 V gate drive and 30 A, keeping conduction losses within the 65 W power dissipation ceiling.
Switching losses and gate drive budget
Tested at 400 V, 30 A with a 10 Ohm gate resistor and 15 V gate drive, the part switches 360 µJ on and 350 µJ off per cycle — the dominant loss term in hard-switched topologies like PFC and motor-drive inverters. Turn-on delay is 35 ns and turn-off delay 125 ns at 25 °C; the 80 ns reverse recovery time of the co-packaged diode sets the dead-time floor in half-bridge legs. Total gate charge of 74 nC means the gate-driver output stage needs to source and sink about 0.74 A peak at a 100 kHz switching frequency to keep the Miller plateau transition clean.
Package, mounting, and thermal path
The TO-3PFP (SC-94) through-hole package has a large exposed copper tab on the back for heatsink mounting — the junction is rated to 175 °C, so the thermal interface and heatsink sizing determine the real continuous current derating.
Lifecycle and compliance
ROHS3 compliant per the listing; no further regulatory documentation (REACH, UL, IEC) is cited in the available record.