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Renesas Electronics RJH60M2DPE-00#J3

RJH60M2DPE-00#J3 IGBT, 600 V, 25 A, Trench, SC-83

MPNRJH60M2DPE-00#J3
End of Life

Renesas RJH60M2DPE-00#J3 Trench IGBT, 600 V Vces, 25 A Ic, 2.5 V Vce(on) @ 15 V/12 A, 33 nC Qg, 180 µJ switching energy, SC-83 (4-LDPAK) SMD, 150°C Tj max.

$3.16Ref. price · indicative, final on quote
PackagingSC-83
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

RJH60M2DPE-00#J3 Technical Specifications
ParameterValue
IGBT typeTrench
Input typeStandard
Mounting typeSurface Mount
Voltage - collector emitter breakdown600 V
Current - collector (Ic)25 A
Power - max63 W
Operating temperature150°C (TJ)
PackageBulk
Gate charge33 nC
CaseSC-83
Test condition300V, 12A, 5Ohm, 15V
Switching energy180µJ (on), 180µJ (off)
Td (on/off) @ 25°C32ns/70ns
Vce(on) (Max) @ vge, ic2.5V @ 15V, 12A
Reverse recovery time85 ns

Product details

600 V / 25 A Trench IGBT in an SMD power package

The Renesas RJH60M2DPE-00#J3 is a 600 V, 25 A Trench IGBT in an SC-83 (4-LDPAK) surface-mount package. It targets hard-switched power stages — motor drives, PFC boost converters, welding inverters, and induction heating — where the 2.5 V typical Vce(on) at 15 V gate, 12 A collector keeps conduction losses in check. Gate charge of 33 nC is modest for this current class, which relaxes gate-driver sourcing requirements and cuts switching losses. Switching energy measures 180 µJ on and off under the test condition of 300 V, 12 A, 5 Ω gate resistor, 15 V gate drive — balanced edges that simplify snubber design in hard-switched bridges.

Package and mounting — SC-83 / 4-LDPAK

The SC-83 case is a large-gauge SMD package, also referred to as 4-LDPAK. It has a wide exposed drain pad on the bottom for thermal transfer to the PCB. The mounting type is surface mount. A generous copper land pattern with multiple vias to an internal plane is expected for any continuous current above a few amps. The package is — not tape-and-reel — which means manual or low-volume placement. Verify pick-and-place compatibility if automated assembly is planned; Bulk tubes are common for this package class.

Lifecycle and sourcing

The RJH60M2DPE-00#J3 carries an active lifecycle status — no end-of-life notice, no NRND flag. It remains a current-production part from Renesas. For BOM freeze or dual-source planning, no official second-source or pin-compatible alternate appears in the record.

Frequently asked questions

What is the Vce(on) of RJH60M2DPE-00#J3?

The typical Vce(on) is 2.5 V at a gate voltage of 15 V and a collector current of 12 A. This is the on-state voltage that drives conduction loss in the design.

What package is RJH60M2DPE-00#J3?

It comes in an SC-83 surface-mount package, also designated 4-LDPAK. The supplier device package is 4-LDPAK. The part is supplied in Bulk form.

What is the gate charge of RJH60M2DPE-00#J3?

The total gate charge is 33 nC. This is a relatively low figure for a 25 A IGBT, which eases gate-driver power requirements and speeds up switching transitions.

What is the switching energy of RJH60M2DPE-00#J3?

Switching energy is 180 µJ for turn-on and 180 µJ for turn-off, tested at 300 V, 12 A, 5 Ω gate resistor, and 15 V gate drive. The symmetric values simplify loss calculation in hard-switched topologies.