1200 V, 30 A IGBT in a TO-247-3 package
The RJH1CM5DPQ-E0#T2 is an N-channel IGBT rated for a collector-emitter breakdown voltage of 1200 V and a continuous collector current of 30 A, housed in a TO-247-3 through-hole package. With a maximum power dissipation of 245 W and a junction temperature ceiling of 150°C, this part is sized for motor-drive, inverter, and power-supply stages where 1200 V blocking is required.
Switching performance and gate drive requirements
Gate charge is 74 nC. Switching energy is 1.6 mJ during turn-on and 700 µJ during turn-off, tested at 600 V, 15 A, with a 5 Ω gate resistor and 15 V gate drive. Turn-on delay is 40 ns and turn-off delay is 100 ns at 25°C, giving a combined switching window that supports carrier frequencies in the tens of kilohertz without excessive dead-time overhead.
On-state voltage and reverse recovery
Collector-emitter saturation voltage is 2.7 V typical at 15 V gate drive and 15 A collector current — this sets the conduction loss floor for the chosen operating point. Reverse recovery time of the internal diode is 200 ns, which influences turn-on loss in hard-switched topologies and may call for a snubber or a fast-recovery external diode in high-frequency designs.
Lifecycle and sourcing
No official second-source or pin-compatible alternate is listed in the cross-reference records.