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Renesas Electronics NP75P04YLG-E1-AY

NP75P04YLG-E1-AY P-Channel MOSFET, 40V 75A, 9.7mOhm Rds(on)

MPNNP75P04YLG-E1-AY
End of Life

Renesas NP75P04YLG--AY, P-Channel MOSFET, 40 V Vdss, 75 A continuous drain, 9.7 mOhm max Rds(on) at 37.5 A, 10 V, 8-HSON package, surface mount, active.

$2.4Ref. price · indicative, final on quote
Renesas Electronics NP75P04YLG-E1-AY datasheet (PDF)
Packaging8-SMD, Flat Lead Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NP75P04YLG-E1-AY specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C75A (Tc)
Power dissipation1W (Ta), 138W (Tc)
Operating temperature175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SMD, Flat Lead Exposed Pad
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs9.7mOhm @ 37.5A, 10V
Gate charge (Qg) (Max) @ vgs140 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4800 pF @ 25 V

Product details

P-channel 40 V power switch — 9.7 mOhm Rds(on) at 37.5 A

The NP75P04YLG-E1-AY: The Renesas NP75P04YLG--AY is a P-channel power MOSFET rated for 40 V drain-source breakdown and 75 A continuous drain current at the case.

Gate charge totals 140 nC at Vgs = 10 V, with the input capacitance at 4800 pF measured at 25 V drain-source. Drive voltage range is 5 V to 10 V for the Rds(on) floor; at 5 V the on-resistance rises above the 10 V figure, so a 10 V gate rail is preferred for lowest conduction loss.

The 8-HSON package (8-SMD flat-lead exposed pad) is surface-mount with a large copper slug on the underside. A 175°C maximum junction temperature allows aggressive thermal cycling in high-current pulse applications.

ROHS3 compliance is confirmed.

Frequently asked questions

Is NP75P04YLG--AY RoHS compliant?

Yes — the NP75P04YLG--AY is ROHS3 compliant.