P-channel 40 V power switch — 9.7 mOhm Rds(on) at 37.5 A
The NP75P04YLG-E1-AY: The Renesas NP75P04YLG--AY is a P-channel power MOSFET rated for 40 V drain-source breakdown and 75 A continuous drain current at the case.
Gate drive and switching budget
Gate charge totals 140 nC at Vgs = 10 V, with the input capacitance at 4800 pF measured at 25 V drain-source. Drive voltage range is 5 V to 10 V for the Rds(on) floor; at 5 V the on-resistance rises above the 10 V figure, so a 10 V gate rail is preferred for lowest conduction loss. The 2.5 V threshold at 250 µA means the device is fully enhanced well above that point.
Package and thermal path
The 8-HSON package (8-SMD flat-lead exposed pad) is surface-mount with a large copper slug on the underside. The datasheet rates power dissipation at 1 W in still air (Ta) and 138 W when the case is held at 25°C (Tc) — the real-world limit is set by the PCB copper area soldered to the exposed pad. A 175°C maximum junction temperature allows aggressive thermal cycling in high-current pulse applications.
Sourcing and compliance
ROHS3 compliance is confirmed.