Renesas NP75P03YDG--AY P-Channel MOSFET, 30 V drain-source, 75 A continuous drain, 6.2 mOhm Rds(on) at 10 V, 141 nC gate charge, 8-HSON surface-mount package.
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 5V, 10V |
| Current - continuous drain (Id) @ 25°C | 75A (Tc) |
| Power dissipation | 1W (Ta), 138W (Tc) |
| Operating temperature | 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SMD, Flat Lead Exposed Pad |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 6.2mOhm @ 37.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 141 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4800 pF @ 25 V |
The NP75P03YDG-E1-AY: P-Channel MOSFET, 30 V drain-source, 75 A continuous drain, 6.2 mOhm Rds(on) at 10 V.
Total gate charge of 141 nC at 10 V. Input capacitance is 4800 pF at 25 V drain-source.
8-HSON surface-mount package with exposed pad for heat spreading. ±20 V maximum gate-source voltage.
Submit a request with your target quantity and lead-time requirements for a current quote.