40 V, 75 A N-channel — where the 5.7 mOhm Rds(on) matters
The NP75N04VUK-E1-AY: The NP75N04VUK--AY is a 40 V, 75 A N-channel power MOSFET from Renesas in a TO-252 (DPak) surface-mount package.
At 5.7 mOhm max, the conduction loss at 38 A is under 8.2 W — manageable in the TO-252 package with adequate copper on the drain tab. The 45 nC total gate charge at 10 V means the driver needs about 4.5 mA per 100 kHz of switching frequency to charge the gate; a standard gate driver IC handles that without external boost. Input capacitance is 2400 pF at 25 V drain-source — moderate for a 75 A device, which keeps the Miller plateau short and reduces cross-conduction risk in hard-switched topologies.
175°C junction — thermal headroom for tight enclosures
Rated for a 175°C maximum junction temperature, this FET can run hotter than the typical 150°C industrial part. In a sealed automotive ECU or a fanless PSU, that extra 25°C headroom means the heatsink or PCB copper area can be smaller before the part hits its thermal shutdown. The 75 W case-limited dissipation at Tc=25°C is the design ceiling; derate linearly above that.
TO-252 footprint — the MP-3ZP leadframe variant
The supplier device package is TO-252 (MP-3ZP) — Renesas's specific leadframe variant of the standard DPak. The three-pin footprint (gate, drain tab, source) is the same as any TO-252-3.