Active P-Channel power switch — 60 V, 50 A, 16.5 mOhm
The NP50P06SDG-E1-AY: The Renesas NP50P06SDG--AY is a P-Channel power MOSFET rated at 60 V drain-to-source with a continuous drain current of 50 A at 25 °C case temperature. Gate charge is specified at 100 nC max at 10 V, which tells the drive circuit designer what peak current the gate driver needs to hit the target switching frequency. The 5000 pF input capacitance at 10 V drain bias confirms the gate drive impedance should be kept low to avoid slew-rate limiting.
TO-252-3 package — the tab is the thermal path
This comes in a TO-252-3 (DPak) surface-mount package with the exposed tab as the drain connection and the primary heat path. The power dissipation rating splits sharply: 1.2 W in still air at 25 °C ambient, but 84 W when the tab is soldered to a sufficient copper area on the PCB and the case temperature is held at 25 °C. That 84 W figure assumes a thermal design that pulls heat from the tab into the board — without that copper plane the part thermally throttles well before its current rating. Operating junction temperature is rated to 175 °C, which is the standard ceiling for automotive-grade silicon. The 2.5 V threshold voltage at 250 µA drain current means a 5 V logic gate drive will turn it on hard, though the 16.5 mOhm spec is guaranteed at 10 V.
No official second-source cross-reference is listed in the manufacturer documentation, so dual-sourcing would require qualification of an alternative P-channel part with matching Rds(on) and gate charge.