P-channel switch for 12V and 24V rails
The NP50P04SDG-E1-AY: The NP50P04SDG--AY is a 40 V, 50 A P-channel MOSFET in a TO-252 (DPak) surface-mount package.
On-resistance and gate drive
Rds(on) is specified at 9.6 mOhm max with 10 V gate drive at 25 A drain current. The device is also characterised at 4.5 V gate drive for lower-voltage logic-level interfaces, though the on-resistance will be higher than the 10 V figure. Total gate charge is 100 nC at 10 V. A gate driver capable of sourcing and sinking that charge in the target switching interval is needed — at 100 kHz the average gate drive current is 10 mA.
Thermal and package considerations
Maximum junction temperature is 175 °C. Power dissipation is rated at 1.2 W in still air at 25 °C ambient, and 84 W when the case is held at 25 °C — the actual continuous current depends on the PCB copper area and any heatsinking attached to the TO-252 tab. The TO-252 (DPak) package has a single exposed drain tab.
