NP50P04SDG-E1-AY

Renesas Electronics

Renesas NP50P04SDG--AY, P-Channel MOSFET, 40 V Vdss, 50 A continuous drain, 9.6 mOhm Rds(on) at 10 V, TO-252 surface-mount package.

Renesas Electronics NP50P04SDG-E1-AY
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[IN STOCK] In Stock: 2 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NP50P04SDG-E1-AY specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation1.2W (Ta), 84W (Tc)
Operating temperature175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs9.6mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs100 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5000 pF @ 10 V

Technical details

P-channel switch for 12V and 24V rails

The NP50P04SDG-E1-AY: The NP50P04SDG--AY is a 40 V, 50 A P-channel MOSFET in a TO-252 (DPak) surface-mount package.

On-resistance and gate drive

The device is also characterised at 4.5 V gate drive for lower-voltage logic-level interfaces, though the on-resistance will be higher than the 10 V figure. Total gate charge is 100 nC at 10 V. A gate driver capable of sourcing and sinking that charge in the target switching interval is needed — at 100 kHz the average gate drive current is 10 mA.

Thermal and package considerations

Maximum junction temperature is 175 °C. Power dissipation is rated at 1.2 W in still air at 25 °C ambient, and 84 W when the case is held at 25 °C — the actual continuous current depends on the PCB copper area and any heatsinking attached to the TO-252 tab. The TO-252 (DPak) package has a single exposed drain tab.

NP50P04SDG-E1-AY
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